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IXTP102N15T

Name: IXTP102N15T
Brand: IXYS
SKU: 608585
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXTP102N15T
Manufacturer	IXYS
Catalog	FETs - Single
Description	Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated \| MOSFET N-CH 150V 102A TO-220
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	150V
Id - Continuous Drain Current	102A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	18mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id	5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs	87nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	5220pF at 25V
Power Dissipation (Maximum)	455W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	Through Hole
Supplier Device Package	TO-220AB
Manufacturer Package	TO-220-3
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1191273-IXTP102N15T
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IXTP102N15T CAD Model

Description

IXYS's 1191273-IXTP102N15T is a through hole mounted N-channel MOSFET transistor with a drain-source breakdown voltage of 150V.

The transistor has a continuous drain current of: 102A
a maximum on-state resistance of: 18mOhm @ 500mA and 10V.
The transistor is packaged in a: TO-220AB case and can operate in a temperature range of -55°C to 175°C. and the supply and demand status is balanced.

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