IXTK120N25 Real Image
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 250V
Id - Continuous Drain Current 120A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 20mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 360nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 7700pF at 25V
Power Dissipation (Maximum) 730W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-264 (IXTK)
Manufacturer Package TO-264-3, TO-264AA
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191265-IXTK120N25
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTK120N25 CAD Model

Description

The IXTK120N25 is a N-Channel MOSFET from IXYS. It is designed with a drain-source breakdown voltage of 250V and a continuous drain current of 120A. The maximum Rds On is 20mOhm @ 500mA and 10V. It has a gate-source voltage of ±20V and an input capacitance of 7700pF @ 25V. The IXTK120N25 is packaged in TO-264 (IXTK) and is suitable for use in Discrete Semiconductor Products. It has a power dissipation of 730W and a drive voltage of 10V. The temperature range for operating this MOSFET is between -55°C to 150°C. in the open market. The manufacturer pack quantity is 30 and it has an MSL level of 1 (unlimited).

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