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Same model may have multiple batches, images only for reference.
IXTH1N300P3HV IXYS
Same model may have multiple batches, images only for reference.

IXTH1N300P3HV

Part No IXTH1N300P3HV
Manufacturer IXYS
Catalog FETs - Single
Description MOSFET N-CH 3000V 1A TO247HV
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202370-IXTH1N300P3HV
Manufacturer IXYS
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series Polar P3™
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 3000 V
Power Dissipation (Max) 195W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Ultra Librarian 3D Model Ultra Librarian IXTH1N300P3HV CAD Model

Description

The Polar P3™ N-Channel MOSFET is a high-performance transistor manufactured by IXYS.

  • Product Category: Discrete Semiconductor Products
  • Application: FETs and MOSFETs
  • Technology: MOSFET
  • Package: Tube
  • Drain to Source Voltage (Vdss): 3000V
  • Power Dissipation: 195W
  • Operating Temperature: -55°C to 150°C
  • Component Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $78.8960 $78.8960
2+ $76.4305 $152.8610
3+ $73.9650 $221.8950
4+ $71.4995 $285.9980
5+ $64.1030 $320.5150
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