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IXTH10P60

Part No IXTH10P60
Manufacturer IXYS
Catalog FETs - Single
Description Standard Power MOSFET | MOSFET P-CH 600V 10A TO-247AD
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1Ohm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 160nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4700pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247 (IXTH)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level Not Applicable
Win Source Part Number 1191248-IXTH10P60
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTH10P60 CAD Model

Description

The IXTH10P60 is a P-channel MOSFET with a continuous drain current of 10A by IXYS.

  • Voltage Rating: 600V
  • Package: TO-247-3 package
  • Maximum Power Dissipation: 300W
  • Gate-Source Voltage Threshold: 5V @ 250μA
  • Gate Charge: 160nC @ 10V
  • Input Capacitance: 4700pF @ 25V
  • Drive Voltage: 10V to the maximum Rds On and minimum Rds On
  • Operating Temperature Range: -55°C to 150°C
  • Ideal for: Use in power supplies, motor drives, and inverters

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $19.6213 $58.8639
7+ $16.0996 $112.6972
10+ $15.5965 $155.9650
14+ $15.0933 $211.3062
18+ $14.5902 $262.6236
23+ $13.0809 $300.8607
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 110 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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