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Same model may have multiple batches, images only for reference.
IXTC75N10 Real Image
Same model may have multiple batches, images only for reference.

IXTC75N10

Part No IXTC75N10
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 72A ISOPLUS220 / N-Channel 100 V 72A (Tc) 230W (Tc) Through Hole ISOPLUS220™
Datasheet
IXTC75N10 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series MegaMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V
Power Dissipation (Max) 230W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS220™
Package / Case ISOPLUS220™
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1179102-IXTC75N10
Ultra Librarian 3D Model Ultra Librarian IXTC75N10 CAD Model

Description

The IXTC75N10 is an N-channel MegaMOS™ MOSFET with a drain to source voltage of 100V and a continuous drain current of 72A @ 25°C.

  • Vds Drain-Source Voltage: 100V
  • Id Continuous Drain Current @ 25°C: 72A
  • Rds On @ Id, Vgs: 20mOhm @ 37.5A, 10V
  • Qg Gate Charge @ Vgs: 260 nC @ 10V
  • Input Capacitance @ Vds: 4500pF @ 25V
  • Vgs Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C ~ 150°C
  • Package: ISOPLUS220™

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