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Same model may have multiple batches, images only for reference.
IXTA52P10P Real Image
Same model may have multiple batches, images only for reference.

IXTA52P10P

Part No IXTA52P10P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 52A TO263 / P-Channel 100 V 52A (Tc) 300W (Tc) Surface Mount TO-263AA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series PolarP™
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 52A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2845 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IXTA52
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1066197-IXTA52P10P
Ultra Librarian 3D Model Ultra Librarian IXTA52P10P CAD Model

Description

The IXYS IXTA52P10P is a P-Channel MOSFET transistor with a drain to source voltage of 100V and a continuous drain current of 52A @ 25°C.

  • Drain to Source Voltage: 100V
  • Continuous Drain Current: 52A @ 25°C
  • Maximum Gate Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 60nC @ 10V
  • Maximum On-State Resistance: 50mOhm @ 52A and 10V
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Ideal for: applications such as power supplies, motor control, and lighting control.

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