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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 32A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 130mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 185nC at 10V
Gate Source Voltage (Maximum) ±15V
Input Capacitance (Ciss) (Maximum) at Vds 14500pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package TO-263 (IXTA)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191238-IXTA32P20T
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTA32P20T CAD Model

Description

The IXYS MOSFET is a high-quality electronic component that is designed to provide reliable and efficient performance.

  • Transistor Polarity: P-Channel
  • Drive Voltage: 10V
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Power Dissipation: 300W
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 32A
  • Maximum Rds On: 130mOhm @ 16A and 10V
  • Gate-Source Voltage: ±15V
  • Input Capacitance: 14500pF @ 25V
  • Suitable For: use in discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.3563 $62.1378
14+ $8.4974 $118.9636
21+ $8.2319 $172.8699
29+ $7.9663 $231.0227
37+ $7.7008 $284.9296
49+ $6.9042 $338.3058
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 220 pieces
MOQ: 6 pcs
Order Increment : 1 piece
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