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Same model may have multiple batches, images only for reference.
IXTA2N80 Real Image
Same model may have multiple batches, images only for reference.

IXTA2N80

Part No IXTA2N80
Manufacturer IXYS
Catalog FETs - Single
Description High Voltage MOSFET | MOSFET N-CH 800V 2A TO-263
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Bulk
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 6.2Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 22nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 440pF at 25V
Power Dissipation (Maximum) 54W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package TO-263 (IXTA)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191236-IXTA2N80
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTA2N80 CAD Model

Description

The IXYS 1191236-IXTA2N80 is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 800V and a continuous drain current of 2A.

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 2A
  • Maximum Rds On: 6.2Ohm @ 500mA, 10V
  • Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 22nC @ 10V
  • Input Capacitance: 440pF @ 25V
  • Package: TO-263 (IXTA)
  • Power Dissipation: 54W
  • Operating Temperature Range: -55°C to 150°C
  • Application: Discrete Semiconductor Products

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