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Same model may have multiple batches, images only for reference.
IXKC15N60C5 Real Image
Same model may have multiple batches, images only for reference.

IXKC15N60C5

Part No IXKC15N60C5
Manufacturer IXYS
Catalog FETs - Single
Description Electrically isolated back surface Electrically isolated back surface | MOSFET N-CH 600V 15A ISOPLUS220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 15A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 165mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id 3.5V at 900μA
Gate Charge (Qg) (Maximum) at Vgs 52nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2000pF at 100V
FET Feature Super Junction
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package ISOPLUS220
Manufacturer Package ISOPLUS220
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191216-IXKC15N60C5
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXKC15N60C5 CAD Model

Description

The IXKC15N60C5 is a MOSFET technology-based super junction N-channel transistor designed and manufactured by IXYS.

  • Mounting: Through hole
  • Package: ISOPLUS220 package
  • Packaging: Tube
  • Maximum Vds: 600V
  • Continuous Drain Current: 15A
  • Maximum Rds On: 165mOhm @ 12A and 10V
  • Maximum Gate Source Voltage: ±20V
  • Gate Source Voltage(th): 3.5V @ 900μA
  • Gate Charge (Qg): 52nC @ 10V
  • Input Capacitance (Ciss): 2000pF @ 100V
  • Supply and demand status: Limited
  • Manufacturer Pack Quantity: 50
  • MSL Level: 1 (unlimited)

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