The IXGQ86N60PC is a high-performance IGBT (Insulated Gate Bipolar Transistor) from IXYS, designed for high-speed switching applications. This device combines the advantages of both MOSFETs and bipolar transistors, offering high input impedance and low on-state power loss. It is suitable for applications requiring efficient power handling and fast switching speeds.

Applications

• Uninterruptible Power Supplies (UPS)
• Welding equipment
• Induction heating
• AC motor drives
• Solar inverters
• Power factor correction (PFC) circuits

Features

• High blocking voltage capability (600V)
• Low VCE(sat) for reduced power dissipation
• Fast switching speed
• Avalanche capability
• High input impedance
• Easy to parallel due to positive temperature coefficient of VCE(sat)

Benefits

• Improved energy efficiency due to lower power losses.
• Reduced cooling requirements because of lower heat generation.
• Higher system reliability due to robust design and avalanche capability.
• Simplified gate drive circuitry due to high input impedance.
• Increased power density in power electronic systems.
• Cost savings through reduced energy consumption and cooling expenses.

Additional Details

The IXGQ86N60PC has a collector-emitter voltage rating of 600V and a continuous collector current rating of 86A at 25°C. The gate charge is typically around 75nC. It features a trench IGBT structure, contributing to its low on-state voltage and fast switching performance. The device is typically supplied in a TO-247 package for effective heat dissipation.

This IGBT is designed to provide a robust and efficient solution for demanding power switching applications. Its combination of high voltage and current capabilities, along with fast switching speeds and low power losses, makes it a suitable choice for a variety of industrial and commercial power electronic systems.