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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Bulk
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 60A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 32A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 320μJ (off)
Input Type Standard
Gate Charge 110nC
Turn-on and Turn-off delay time 25ns/85ns
Testing Conditions 480V, 32A, 4.7 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049612-IXGH32N60C
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Motor Drive & Control, Power Management
Ultra Librarian 3D Model Ultra Librarian IXGH32N60C CAD Model

Description

The IXGH32N60C IGBT from IXYS is a high-power transistor designed for use in motor drive and control systems.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 60A
  • Maximum Power Dissipation: 200W
  • Collector-Emitter Saturation Voltage: 2.5V @ 15V, 32A
  • Package: TO-247AD (IXGH)
  • Supply and Demand Status: Balanced

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