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IXFP180N10T2

Part No IXFP180N10T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 180A TO220AB / N-Channel 100 V 180A (Tc) 480W (Tc) Through Hole TO-220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, TrenchT2™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10500 pF @ 25 V
Power Dissipation (Max) 480W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXFP180
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1176319-IXFP180N10T2
Ultra Librarian 3D Model Ultra Librarian IXFP180N10T2 CAD Model

Description

The IXYS HiPerFET™, TrenchT2™ 1176319-IXFP180N10T2 is a N-channel MOSFET transistor with a drain to source voltage of 100V and a continuous drain current of 180A @ 25°C.

  • Maximum Rds On: 6mOhm @ 50A and 10V
  • Gate Charge: 185nC @ 10V
  • Input Capacitance: 10500pF @ 25Vds
  • Maximum Vgs: ±20V
  • Operating Temperature Range: -55°C to 175°C
  • Package: TO-220-3
  • Power Dissipation: 480W @ Tc
  • Package Quantity: 50 units

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.8549 $59.9529
50+ $2.3426 $117.1300
77+ $2.2693 $174.7361
106+ $2.1961 $232.7866
137+ $2.1230 $290.8510
183+ $1.9034 $348.3222
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,560 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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