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IXFN230N20T

Part No IXFN230N20T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 220A SOT227B / N-Channel 200 V 220A (Tc) 1090W (Tc) Chassis Mount SOT-227B
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Trench
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 378 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 28000 pF @ 25 V
Power Dissipation (Max) 1090W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN230
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1189535-IXFN230N20T
Ultra Librarian 3D Model Ultra Librarian IXFN230N20T CAD Model

Description

The IXFN230N20T is a high power MOSFET transistor manufactured by IXYS.

  • Applications: Power supplies, motor controls, and lighting ballasts
  • Drain-Source Voltage: 200V
  • Continuous Drain Current: 220A
  • On-Resistance: 0.0075 ohms
  • Power Dissipation: 1090W
  • Supply and Demand: Limited
  • Drive Voltage: 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $72.7612 $72.7612
2+ $59.7015 $119.4030
3+ $57.8359 $173.5077
4+ $55.9702 $223.8808
5+ $54.1045 $270.5225
7+ $48.5075 $339.5525
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,900 pieces
Order Increment : 1 pcs
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