IXFH30N50 Real Image
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 30A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 160mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 4mA
Gate Charge (Qg) (Maximum) at Vgs 300nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5700pF at 25V
Power Dissipation (Maximum) 360W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247AD (IXFH)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191065-IXFH30N50
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian IXFH30N50 CAD Model

Description

The IXYS IXFH30N50 is an N-channel MOSFET with a maximum drain-source breakdown voltage of 500V and a continuous drain current of 30A.

  • Maximum Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 30A
  • Power Dissipation: 360W
  • Input Capacitance: 5700pF @ 25V
  • Gate Charge: 300nC @ 10V
  • Gate-Source Voltage: ±20V
  • Status: Obsolete
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $12.6358 $75.8148
13+ $10.3682 $134.7866
20+ $10.0448 $200.8960
27+ $9.7201 $262.4427
35+ $9.3967 $328.8845
47+ $8.4240 $395.9280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 8,600 pieces
MOQ: 6 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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