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IXFA4N100Q Real Image IXFA4N100Q real image15730
Same model may have multiple batches, images only for reference.
IXFA4N100Q Real Image IXFA4N100Q real image15730
IXFA4N100Q Real Image IXFA4N100Q real image15730
Same model may have multiple batches, images only for reference.

IXFA4N100Q

Part No IXFA4N100Q
Manufacturer IXYS
Catalog FETs - Single
Description MOSFET N-CH 1000V 4A TO-263 / HiPerFET Power MOSFETs Q-Class
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3Ohm at 2A, 10V
Vgs(th) (Maximum) at Id 4.5V at 1.5mA
Gate Charge (Qg) (Maximum) at Vgs 39nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1050pF at 25V
Power Dissipation (Maximum) 150W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package TO-263 (IXFA)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 809418-IXFA4N100Q
Ultra Librarian 3D Model Ultra Librarian IXFA4N100Q CAD Model

Description

The IXYS IXFA4N100Q, manufactured by IXYS, is an N-Channel MOSFET.

  • Drain to Source Voltage (Vdss): 1000V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Package: TO-263 (IXFA)
  • Power Dissipation: 150W (Tc)
  • Gate Charge (Qg) (Maximum) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1050pF @ 25V
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Packaging: Tube
  • Maximum Vgs: ±20V
  • Rds On (Maximum) @ Id, Vgs: 3Ohm @ 2A, 10V
  • ECCN: EAR99
  • Application: Fast recovery time =< 500ns and > 200mA (Io)

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10+ $10.3642 $103.6420
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36+ $8.4209 $303.1524
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