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Same model may have multiple batches, images only for reference.
IXFA14N60P Real Image
Same model may have multiple batches, images only for reference.

IXFA14N60P

Part No IXFA14N60P
Manufacturer IXYS
Catalog FETs - Single
Description PolarHV HiperFET Power MOSFET | MOSFET N-CH 600V 14A D2-PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 14A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 550mOhm at 7A, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 2.5mA
Gate Charge (Qg) (Maximum) at Vgs 36nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2500pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package TO-263 (IXFA)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191037-IXFA14N60P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFA14N60P CAD Model

Description

IXFA14N60P is an N-channel MOSFET designed for power applications by IXYS.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 14A
  • Maximum Power Dissipation: 300W
  • Maximum Rds On @ Id, Vgs: 550mOhm @ 7A, 10V
  • Gate-Source Threshold Voltage @ Id: 5.5V @ 2.5mA
  • Gate Charge @ Vgs: 36nC @ 10V
  • Package: TO-263 (IXFA)
  • Operating Temperature Range: -55°C to 150°C
  • Ideal for: Power supplies, motor drives, and other high-performance applications.

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