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Same model may have multiple batches, images only for reference.
IXDP35N60B Real Image
Same model may have multiple batches, images only for reference.

IXDP35N60B

Part No IXDP35N60B
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 60A 250W TO220AB / IGBT NPT 600 V 60 A 250 W Through Hole TO-220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr IXYS
Package Tube
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 70 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 35A
Power - Max 250 W
Switching Energy 1.6mJ (on) , 800µJ (off)
Input Type Standard
Gate Charge 120 nC
Test Condition 300V, 35A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Base Product Number IXDP35
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1348580-IXDP35N60B
Ultra Librarian 3D Model Ultra Librarian IXDP35N60B CAD Model

Description

The IXDP35N60B is an IGBT transistor from IXYS that is designed for use in discrete semiconductor products such as transistors, IGBTs, and single IGBTs.

  • Manufacturer: IXYS
  • Product Type: IGBT Transistor
  • Application: Discrete Semiconductor Products (Transistors, IGBTs, Single IGBTs)
  • IGBT Type: NPT IGBT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector Pulsed (Icm): 70 A
  • Power - Max: 250 W
  • Mounting Type: Through Hole
  • Package: TO-220-3
  • Current - Collector (Ic) (Max): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A
  • Gate Charge: 120 nC
  • Test Condition: 300V, 35A, 10Ohm, 15V

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