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Same model may have multiple batches, images only for reference.
IXBA14N300HV Real Image
Same model may have multiple batches, images only for reference.

IXBA14N300HV

Part No IXBA14N300HV
Manufacturer IXYS
Catalog IGBTs - Single
Description REVERSE CONDUCTING IGBT / IGBT NPT 3000 V 38 A 200 W Surface Mount TO-263
Datasheet
IXBA14N300HV Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr IXYS
Series BIMOSFET™
Package Tube
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 3000 V
Current - Collector (Ic) (Max) 38 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 14A
Power - Max 200 W
Input Type Standard
Gate Charge 62 nC
Td (on/off) @ 25°C 40ns/166ns
Test Condition 960V, 14A, 20Ohm, 15V
Reverse Recovery Time (trr) 1.4 µs
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Supplier Device Package TO-263
Base Product Number IXBA14
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1338859-IXBA14N300HV
Ultra Librarian 3D Model Ultra Librarian IXBA14N300HV CAD Model

Description

The IXYS IGBT (Insulated Gate Bipolar Transistor) is a high-performance NPT IGBT type electronic component.

  • Type: NPT IGBT
  • Voltage - Collector Emitter Breakdown (Max): 3000 V
  • Current - Collector Pulsed (Icm): 120 A
  • Gate Charge: 62 nC
  • Reverse Recovery Time (trr): 1.4 µs
  • Mounting Type: Surface Mount
  • Power - Max: 200 W

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