The IRFL110TR-GE3 is an N-channel power MOSFET from International Rectifier, now part of Infineon Technologies. It is part of their HEXFET® family, designed for efficient power switching applications. This MOSFET is known for its low on-resistance and fast switching speed, making it suitable for various power management circuits.
Applications:
- DC-DC converters
- Load switching
- Power management circuits in portable devices
- LED lighting
- Motor control applications
Features:
- N-Channel MOSFET
- Logic-Level Gate Drive
- Low On-Resistance (RDS(on))
- Fast Switching Speed
- Avalanche Rated
- RoHS Compliant
- Available in a SOT-223 package
Benefits:
- High Efficiency: Reduced power losses due to low RDS(on).
- Fast Switching: Minimizes switching losses, improving overall circuit performance.
- Logic-Level Gate Drive: Simplifies driving circuitry and allows direct interfacing with microcontrollers.
- Robustness: Avalanche rating ensures reliability under transient voltage conditions.
- Compact Footprint: SOT-223 package enables high-density board layouts.
Additional Details:
The IRFL110TR-GE3 has a drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 2.7A, and a typical on-resistance (RDS(on)) of 0.17 Ohms at a gate-source voltage (Vgs) of 5V. The gate charge (Qg) is typically 7.5 nC. The logic-level gate drive allows it to be fully enhanced with a low gate voltage, which is ideal for battery-powered applications or microcontroller-based control. The SOT-223 package provides good thermal performance while maintaining a small footprint, making it suitable for space-constrained applications.
