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SPP18P06P

Part No SPP18P06P
Manufacturer Infineon Technologies
Catalog Electronic Wholesale
Description SIPMOS Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1258064-SPP18P06P
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP18P06P CAD Model

Description

The SPP18P06P is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for a wide range of power switching and amplification applications. The P-channel configuration means it conducts when the gate voltage is lower than the source voltage. This MOSFET is known for its low on-state resistance (RDS(on)) and fast switching speeds.

Applications:

  • DC-DC converters
  • Load switching
  • Power management in battery-powered systems
  • Motor control
  • Solid-state relays

Features:

  • P-Channel MOSFET
  • Voltage Rating (VDS): -60V
  • Continuous Drain Current (ID): -18A
  • Low On-State Resistance (RDS(on)): typically 0.13 Ohms at VGS = -10V
  • Fast switching speed
  • Logic Level Gate Drive
  • Avalanche rated
  • Package: TO-220

Benefits:

  • Efficient Power Switching: The low RDS(on) minimizes power losses during switching, leading to higher efficiency.
  • High Current Handling: The high continuous drain current allows for driving demanding loads.
  • Fast Switching: Fast switching speeds reduce switching losses and improve overall system performance.
  • Logic Level Compatibility: Can be directly driven by logic-level signals, simplifying circuit design.
  • Robust Performance: The avalanche rating ensures that the MOSFET can withstand transient voltage spikes.

Additional Details:

The SPP18P06P P-channel MOSFET is designed for efficient and reliable power switching. The RDS(on) is specified at a gate-source voltage (VGS) of -10V and a drain current of a certain value. The gate threshold voltage (VGS(th)) is an important parameter, indicating the voltage required to turn the MOSFET on. The total gate charge (Qg) is also a key specification, affecting the switching speed and drive requirements. The TO-220 package provides good thermal dissipation capabilities, allowing the MOSFET to handle significant power. Careful consideration of the thermal resistance is crucial in applications where the MOSFET dissipates substantial power. It is important to consult the datasheet for detailed specifications and application guidelines.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2566 $62.5660
23+ $5.1340 $118.0820
35+ $4.9734 $174.0690
48+ $4.8129 $231.0192
63+ $4.6523 $293.0949
84+ $4.1719 $350.4396
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 240 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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