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SPP15P10P

Part No SPP15P10P
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SIPMOS Small-Signal-Transistor | MOSFET P-CH 100V 15A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 15A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 240mOhm at 10.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.1V at 1.54mA
Gate Charge (Qg) (Maximum) at Vgs 50nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1180pF at 25V
Power Dissipation (Maximum) 128W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package PG-TO220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1258062-SPP15P10P
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPP15P10P CAD Model

Description

The Infineon Technologies SPP15P10P is a P-channel MOSFET transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 15A.

  • GPTDescription: It has a maximum gate-source voltage of ±20V and an input capacitance of 1180pF @ 25V.
  • GPTDescription: The device is packaged in a TO-220-3 and operates within a temperature range of -55°C to 175°C.
  • GPTDescription: This device is obsolete and has a medium popularity with a limited supply and demand status.
  • GPTDescription: It is suitable for applications such as power supplies and motor control.

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