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Same model may have multiple batches, images only for reference.
SPP100N03S2L-03 Real Image
Same model may have multiple batches, images only for reference.

SPP100N03S2L-03

Part No SPP100N03S2L-03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS Power-Transistor
Datasheet
SPP100N03S2L-03 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 220nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 8180pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 3 mOhm @ 80A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO220-3-1
Package TO-220-3
Win Source Part Number 1258055-SPP100N03S2L-03
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Family Name SPP100N03S2L-03
Introduction Date May 09, 2003
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SPP100N03S2L-03 CAD Model

Description

The Infineon Technologies SPP100N03S2L-03 is an N-channel MOSFET transistor that is part of the OptiMOS series.

  • Popularity: Medium
  • Power Dissipation: 300W
  • Continuous Drain Current: 100A @ 25°C
  • Rds On: 3 mOhm @ 80A and 10V
  • Gate Charge: 220nC @ 10V
  • Input Capacitance: 8180pF @ 25V
  • Supply and Demand: Limited

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