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SPI80N04S2-04

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Part No	SPI80N04S2-04
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	OptiMOS Power-Transistor
Datasheet	SPI80N04S2-04 Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Series	OptiMOS
Packaging	Tube
Part Status	Obsolete(EOL)
Channel Type Type	N
Technology	MOSFET
Drain Source Voltage	40V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Maximum) @ Id	4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs	170nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds	6980pF @ 25V
Vgs (Maximum)	±20V
Power Dissipation (Maximum)	300W (Tc)
Rds On (Maximum) @ Id, Vgs	3.7 mOhm @ 80A, 10V
Operating Temperature Range	-55°C ~ 175°C (TJ)
Mounting Style	Through Hole
Manufacturer Package	PG-TO262-3-1
Package	TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number	1257926-SPI80N04S2-04
Manufacturer Homepage	www.infineon.com
Popularity	Medium
Supply and Demand Status	Limited
Family Name	SPI80N04S2-04
Introduction Date	May 24, 2004
ECCN	EAR99
Estimated EOL Date	Obsolete
Ultra Librarian 3D Model	Ultra Librarian SPI80N04S2-04 CAD Model

Description

The Infineon Technologies SPI80N04S2-04 is an obsolete (EOL) product with a medium popularity. The device has a maximum power dissipation of 300W (Tc) and a drain-source breakdown voltage of 40V.

GPTDescription: It has a continuous drain current of 80A (Tc) and a gate-source threshold voltage of 4V @ 250μA.
GPTDescription: The MOSFET is mounted through hole and comes in a TO-262-3 Long Leads, I2Pak, TO-262AA package.
GPTDescription: It has a maximum Rds On @ Id,Vgs of 3.7 mOhm @ 80A, 10V.
GPTDescription: The device is ideal for use in discrete semiconductor products.

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