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SPI47N10L

Name: SPI47N10L
Brand: Infineon Technologies
SKU: 675236
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	SPI47N10L
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	SIPMOS Power-Transistor
Datasheet	SPI47N10L Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Series	SIPMOS
Packaging	Tube
Part Status	Obsolete(EOL)
Channel Type Type	N
Technology	MOSFET
Drain Source Voltage	100V
Current - Continuous Drain (Id) @ 25°C	47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs(th) (Maximum) @ Id	2V @ 2mA
Gate Charge (Qg) (Maximum) @ Vgs	135nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds	2500pF @ 25V
Vgs (Maximum)	±20V
Power Dissipation (Maximum)	175W (Tc)
Rds On (Maximum) @ Id, Vgs	26 mOhm @ 33A, 10V
Operating Temperature Range	-55°C ~ 175°C (TJ)
Mounting Style	Through Hole
Manufacturer Package	PG-TO262-3-1
Package	TO-262-3 Long Leads, I2Pak, TO-262AA
RoHS State	Request Verification
Win Source Part Number	1257924-SPI47N10L
Manufacturer Homepage	www.infineon.com
Popularity	Medium
Supply and Demand Status	Limited
Family Name	SPI47N10L
Introduction Date	August 23, 2001
ECCN	EAR99
Estimated EOL Date	Obsolete
Ultra Librarian 3D Model	Ultra Librarian SPI47N10L CAD Model

Description

The Infineon Technologies SPI47N10L is a SIPMOS MOSFET transistor that is designed for use in discrete semiconductor products.

Continuous Drain Current: 47A (Tc) @ 25°C
Maximum Drain-Source Voltage: 100V
Maximum Gate-Source Voltage: ±20V
Maximum Power Dissipation: 175W (Tc)
Maximum On-Resistance: 26 mOhm @ 33A and 10V
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting: Through-hole
Introduction Date: August 23, 2001
Status: Obsolete

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