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Same model may have multiple batches, images only for reference.
SPB70N10L Real Image
Same model may have multiple batches, images only for reference.

SPB70N10L

Part No SPB70N10L
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description SIPMOS Power-Transistor
Datasheet
SPB70N10L Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series SIPMOS
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 2mA
Gate Charge (Qg) (Maximum) @ Vgs 240nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4540pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 250W (Tc)
Rds On (Maximum) @ Id, Vgs 16 mOhm @ 50A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-3-2
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1257802-SPB70N10L
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Family Name SPB70N10L
Introduction Date August 23, 2001
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SPB70N10L CAD Model

Description

The SPB70N10L is an N-channel MOSFET discrete semiconductor product with a drain-source voltage of 100V and continuous drain current of 70A (Tc).

  • Manufacturer: Infineon Technologies
  • Drain-Source Voltage: 100V
  • Continuous Drain Current: 70A (Tc)
  • Maximum Power Dissipation: 250W (Tc)
  • Rds on (maximum) @ Id, Vgs: 16 mOhm @ 50A, 10V
  • Gate-Source Threshold Voltage: 2V @ 2mA
  • Gate Charge (Qg) (maximum) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 4540pF @ 25V
  • Maximum Vgs: ±20V
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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