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Same model may have multiple batches, images only for reference.
SIGC25T60SNCX1SA2 Real Image
Same model may have multiple batches, images only for reference.

SIGC25T60SNCX1SA2

Part No SIGC25T60SNCX1SA2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
SIGC25T60SNCX1SA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Bulk
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 30 A
Current - Collector Pulsed (Icm) 90 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Input Type Standard
Td (on/off) @ 25°C 44ns/324ns
Test Condition 400V, 30A, 11Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case Die
Supplier Device Package Die
Other Names SP000012046,448-SIGC25T60SNCX1SA2
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN OBSOLETE
Win Source Part Number 1277450-SIGC25T60SNCX1SA2
Ultra Librarian 3D Model Ultra Librarian SIGC25T60SNCX1SA2 CAD Model

Description

The Infineon Technologies SIGC25T60SNCX1SA2 is an NPT IGBT transistor that has a maximum collector-emitter breakdown voltage of 600 V and a maximum collector current of 30 A.

  • Maximum Collector-Emitter Breakdown Voltage: 600 V
  • Maximum Collector Current: 30 A
  • Package: Die
  • Product Status: Obsolete
  • RoHS Compliant: Yes
  • Ideal Choice For: Various applications.

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