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Same model may have multiple batches, images only for reference.
SIGC14T60NCX1SA1
Same model may have multiple batches, images only for reference.

SIGC14T60NCX1SA1

Part No SIGC14T60NCX1SA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
SIGC14T60NCX1SA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Bulk
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 15 A
Current - Collector Pulsed (Icm) 45 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 15A
Input Type Standard
Td (on/off) @ 25°C 21ns/110ns
Test Condition 300V, 15A, 18Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case Die
Supplier Device Package Die
Other Names SP000272509,448-SIGC14T60NCX1SA1
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN OBSOLETE
Win Source Part Number 1277462-SIGC14T60NCX1SA1
Ultra Librarian 3D Model Ultra Librarian SIGC14T60NCX1SA1 CAD Model

Description

The Infineon Technologies SIGC14T60NCX1SA1 is an NPT IGBT transistor designed for use in discrete semiconductor products.

  • Maximum Collector-Emitter Breakdown Voltage: 600 V
  • Maximum Collector Current: 15 A
  • Switching Energy: Not specified
  • Input Type: Standard
  • Turn-On Delay Time: 21 ns
  • Turn-Off Delay Time: 110 ns @ 25°C
  • Package: Die
  • Temperature Range: -55°C to 150°C

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