The Infineon Technologies SGW30N60HSFKSA1 is an NPT IGBT transistor.

• Use: Discrete semiconductor products
• Package: PG-TO247-3
• Power Dissipation (Max): 250W
• Current Collector (Max): 41A
• VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
• Pulsed Collector Current: 112A
• Collector-Emitter Saturation Voltage (Max): 3.15V @ 15V, 30A
• Total Switching Energy (Ets): 1.15mJ
• Turn-On and Turn-Off Delay Time: 20ns/250ns
• Testing Conditions: 400V, 30A, 11 Ohm, 15V
• Supply and Demand: Sufficient
• Quantity per Package: 240