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Same model may have multiple batches, images only for reference.
SGB02N120ATMA1 Real Image
Same model may have multiple batches, images only for reference.

SGB02N120ATMA1

Part No SGB02N120ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 6.2A 62W TO263-3
Datasheet
SGB02N120ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 6.2A
Pulsed Collector Current 9.6A
Collector-emitter saturation voltage(Max) 3.6V @ 15V, 2A
Maximum Power Dissipation 62W
Total Switching Energy(Ets) 220μJ
Input Type Standard
Gate Charge 11nC
Turn-on and Turn-off delay time 23ns/260ns
Testing Conditions 800V, 2A, 91 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3
Win Source Part Number 1095575-SGB02N120ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SGB02N120ATMA1 CAD Model

Description

The Infineon Technologies SGB02N120ATMA1 is an NPT IGBT type that is surface mountable. Bold the product name (e.g., SGB02N120ATMA1) and manufacturer (e.g., Infineon Technologies).

  • IGBT Type: NPT
  • Mounting Type: Surface Mountable
  • Case/Package: PG-TO263-3
  • Current Collector (Max): 6.2A
  • VCEO (Max): 1200V
  • Power Dissipation (Max): 62W
  • Pulsed Collector Current: 9.6A
  • Collector-Emitter Saturation Voltage: 3.6V @ 15V, 2A
  • Total Switching Energy: 220μJ
  • Turn-On Delay Time: 23ns
  • Turn-Off Delay Time: 260ns
  • Supply and Demand: Balance
  • Category: Discrete Semiconductor Products

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