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Same model may have multiple batches, images only for reference.
SDT10S60 Real Image
Same model may have multiple batches, images only for reference.

SDT10S60

Part No SDT10S60
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Datasheet
SDT10S60 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Infineon Technologies
Series CoolSiC™+
Package Tube
Product Status Obsolete
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 10A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 350 µA @ 600 V
Capacitance @ Vr, F 350pF @ 0V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package PG-TO220-2-2
Operating Temperature - Junction -55°C ~ 175°C
Other Names SP000014896,SDT10S60XK,SDT10S60X
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1282494-SDT10S60
Ultra Librarian 3D Model Ultra Librarian SDT10S60 CAD Model

Description

The Infineon Technologies SDT10S60 is a silicon carbide Schottky diode designed for use in rectifier applications.

  • Maximum Reverse Voltage: 600 V
  • Maximum Average Rectified Current: 10 A
  • Forward Voltage Drop: 1.7 V @ 10 A
  • Reverse Recovery Time: 0 ns
  • Package: TO-220-2 package
  • Operating Temperature Range: -55°C to 175°C

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