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PTF080451E

Part No PTF080451E
Manufacturer Infineon Technologies
Catalog RFFETs
Description LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family RFFETs
Manufacturer Infineon Technologies
Win Source Part Number 354191-PTF080451E
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PTF080451E CAD Model

Description

The PTF080451E is an LDMOS power transistor manufactured by Infineon Technologies. It is designed for high-power radio frequency (RF) applications within the VHF and UHF frequency bands. Leveraging Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) technology, this transistor boasts high gain, superior efficiency, and exceptional ruggedness, making it well-suited for use in RF power amplifiers.

Applications

  • VHF and UHF Radio Transmitters
  • Television Broadcast Transmitters
  • Industrial Heating Systems
  • Medical RF Equipment
  • RF Amplifiers for communication infrastructures

Features

  • High Gain and Efficiency
  • Optimized for VHF and UHF Frequency Ranges
  • LDMOS Technology
  • High Ruggedness for Reliable Operation
  • Internally Matched for Simplified Design and Implementation
  • Excellent Linearity to Minimize Signal Distortion

Benefits

  • Provides high output power with minimized power consumption due to its high efficiency
  • Versatile component applicable to various RF applications within VHF and UHF bands
  • Offers robust performance under demanding operating conditions
  • Simplifies the design and integration process for RF power amplifiers
  • Enables high-quality signal amplification with minimal distortion

Additional Details

The PTF080451E is engineered to operate at specific voltage and current levels, delivering considerable output power, contingent upon the application and operational parameters. Proper biasing and impedance matching are essential for achieving optimal performance. Effective thermal management is also crucial, as the transistor generates heat during operation, necessitating adequate heat sinking to prevent overheating and potential damage. Comprehensive details concerning the device's electrical characteristics, thermal specifications, and application guidelines are provided in the datasheet from Infineon Technologies. The document includes specific recommendations for biasing, matching networks, and thermal management. LDMOS technology affords advantages over traditional bipolar transistors regarding gain, efficiency, and robustness. Adhering to the manufacturer's specifications for biasing, matching, and thermal considerations is imperative to ensure reliable operation and longevity.

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