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Same model may have multiple batches, images only for reference.
ITD50N04S4L07ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

ITD50N04S4L07ATMA1

Part No ITD50N04S4L07ATMA1
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description ITD50N04 - 20V-40V N-CHANNEL AUT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Rds On (Max) @ Id, Vgs 7.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 18µA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2480pF @ 25V
Power - Max 46W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package PG-TO252-5-311
Base Product Number ITD50
Standard Package 363 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 1064345-ITD50N04S4L07ATMA1
Ultra Librarian 3D Model Ultra Librarian ITD50N04S4L07ATMA1 CAD Model

Description

The OptiMOS™ MOSFET is a high-performance transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 50A
  • Gate: Logic Level
  • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A and 10V
  • Gate Charge (Qg): 33nC @ 10V
  • Input Capacitance (Ciss): 2480pF @ 25V
  • Mounting: Surface Mount
  • Package: TO-252-5, DPak
  • Manufacturer: Infineon Technologies

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