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Same model may have multiple batches, images only for reference.
IRLR7843CPBF Real Image
Same model may have multiple batches, images only for reference.

IRLR7843CPBF

Part No IRLR7843CPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 30V 161A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 161A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 3.3mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 50nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4380pF at 15V
Power Dissipation (Maximum) 140W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188639-IRLR7843CPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLR7843CPBF CAD Model

Description

The IRLR7843CPBF is an N-Channel MOSFET transistor manufactured by Infineon Technologies.

  • Channel Type: N-Channel MOSFET
  • Manufacturer: Infineon Technologies
  • Category: Discrete semiconductor products
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Status: Obsolete
  • Maximum Power Dissipation: 140W
  • Vds - Drain-Source Breakdown Voltage: 30V
  • Id - Continuous Drain Current: 161A
  • Rds On (Maximum) @ Id, Vgs: 3.3mOhm @ 15A, 10V
  • Gate charge (Qg) (Maximum) @ Vgs: 50nC @ 4.5V

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