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Same model may have multiple batches, images only for reference.
IRL3705NS Real Image
Same model may have multiple batches, images only for reference.

IRL3705NS

Part No IRL3705NS
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 55V 89A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 89A
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Maximum) at Id, Vgs 10mOhm at 46A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 98nC at 5V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 3600pF at 25V
Power Dissipation (Maximum) 3.8W, 170W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188476-IRL3705NS
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL3705NS CAD Model

Description

The Infineon Technologies IRL3705NS is a high-performance MOSFET designed for use in a variety of applications.

  • Manufacturer: Infineon Technologies
  • Vds - Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 89A
  • Power Dissipation: 3.8W and 170W

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Quantity Unit Price Ext. Price
35+ $1.8191 $63.6685
80+ $1.4923 $119.3840
120+ $1.4461 $173.5320
170+ $1.3999 $237.9830
215+ $1.3525 $290.7875
290+ $1.2128 $351.7120
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