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Same model may have multiple batches, images only for reference.
IRGPC30FD2 Infineon Technologies
Same model may have multiple batches, images only for reference.

IRGPC30FD2

Part No IRGPC30FD2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT W/DIODE 600V 31A TO-247AC / Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(3+Tab) TO-247AC
Datasheet
IRGPC30FD2 Datasheet
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Part Status Obsolete(EOL)
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 31A
Vce(on) (Maximum) @ Vge, Ic 2.1V @ 15V, 17A
Power - Max 100W
Input Type Standard
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247AC
Win Source Part Number 777093-IRGPC30FD2
Popularity Medium
Supply and Demand Status Limited
Family Name IRGPC30FD2
Introduction Date June 03, 1996
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRGPC30FD2 CAD Model

Description

The Infineon Technologies IRGPC30FD2 is a through-hole mounted transistor with a maximum collector-emitter breakdown voltage of 600V and a current collector (Ic) (Maximum) of 31A.

  • Collector-Emitter Breakdown Voltage: 600V
  • Current Collector (Ic) (Maximum): 31A
  • Vce(on) (Maximum) @ Vge, Ic: 2.1V @ 15V, 17A
  • Power Maximum: 100W
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-247-3
  • Supply and Demand Status: Limited

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