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IRG7PH35UDPBF

Part No IRG7PH35UDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 1200V 50A 180W TO247AC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 50A
Current - Collector Pulsed (Icm) 60A
Vce(on) (Maximum) at Vge, Ic 2.2V at 15V, 20A
Maximum Power 180W
Switching Energy 1.06mJ (on), 620μJ (off)
Input Type Standard
Gate Charge 85nC
Td (on/off) at 25°C 30ns/160ns
Test Condition 600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 105ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188324-IRG7PH35UDPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG7PH35UDPBF CAD Model

Description

The Infineon Technologies IGBT module IRG7PH35UDPBF is a trench IGBT type with a voltage rating of 1200V and a maximum collector current of 50A.

  • Package: TO-247AC
  • Peak Output Current: 1.9A (source) and 2.3A (sink)
  • Gate Charge: 85nC
  • Rise/Fall Time: 40ns/20ns (Typ)
  • Reverse Recovery Time: 105ns
  • Supply and Demand Status: Limited
  • MSL Level: 1 (Unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.6983 $59.1728
39+ $3.0342 $118.3338
59+ $2.9395 $173.4305
82+ $2.8448 $233.2736
105+ $2.7501 $288.7605
141+ $2.4659 $347.6919
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,500 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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