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Same model may have multiple batches, images only for reference.
IRG4RC10UTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4RC10UTRLPBF

Part No IRG4RC10UTRLPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 8.5A 38W DPAK
Datasheet
IRG4RC10UTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 8.5A
Pulsed Collector Current 34A
Collector-emitter saturation voltage(Max) 2.6V @ 15V, 5A
Maximum Power Dissipation 38W
Total Switching Energy(Ets) 80μJ (on), 160μJ (off)
Input Type Standard
Gate Charge 15nC
Turn-on and Turn-off delay time 19ns/116ns
Testing Conditions 480V, 5A, 100 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Win Source Part Number 1047330-IRG4RC10UTRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4RC10UTRLPBF CAD Model

Description

The Infineon Technologies IRG4RC10UTRLPBF is an IGBT transistor with a maximum current collector of 8.5A and a VCEO maximum collector-emitter breakdown voltage of 600V.

  • Maximum Current Collector: 8.5A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 38W
  • Pulsed Collector Current: 34A
  • Collector-Emitter Saturation Voltage: 2.6V @ 15V and 5A
  • Gate Charge: 15nC
  • Package: D-Pak
  • Operating Temperature Range: -55°C to 150°C
  • Total Switching Energy: 80μJ (on), 160μJ (off)
  • Turn-on and Turn-off Delay Time: 19ns/116ns
  • Suitable for: Power supplies, motor control, and lighting

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