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Same model may have multiple batches, images only for reference.
IRG4PSC71UPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4PSC71UPBF

Part No IRG4PSC71UPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR | IGBT 600V 85A 350W SUPER247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 85A
Current - Collector Pulsed (Icm) 200A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 60A
Maximum Power 350W
Switching Energy 420μJ (on), 1.99mJ (off)
Input Type Standard
Gate Charge 340nC
Td (on/off) at 25°C 34ns/56ns
Test Condition 480V, 60A, 5Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-274AA
Supplier Device Package SUPER-247 (TO-274AA)
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188310-IRG4PSC71UPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4PSC71UPBF CAD Model

Description

The Infineon Technologies IRG4PSC71UPBF is an obsolete IGBT that is designed for discrete semiconductor products.

  • Popularity: Medium
  • Supply and Demand: Balance
  • Package: SUPER-247 (TO-274AA)
  • Maximum Power Dissipation: 350W
  • Current - Collector (Ic) (Maximum): 85A
  • Voltage - Collector Emitter Breakdown (Maximum): 600V
  • Operating Temperature: -55°C to 150°C
  • Maximum Vce(on): 2V @ 15V, 60A
  • Td (on/off) @ 25°C: 34ns/56ns
  • Manufacturer Homepage: www.irf.com

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