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Same model may have multiple batches, images only for reference.
IRG4IBC30FD Real Image
Same model may have multiple batches, images only for reference.

IRG4IBC30FD

Part No IRG4IBC30FD
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 20.3A 45W TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 20.3A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Maximum) at Vge, Ic 1.8V at 15V, 17A
Maximum Power 45W
Switching Energy 630μJ (on), 1.39mJ (off)
Input Type Standard
Gate Charge 51nC
Td (on/off) at 25°C 42ns/230ns
Test Condition 480V, 17A, 23Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3 Full Pack
Supplier Device Package TO-220AB Full-Pak
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188256-IRG4IBC30FD
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4IBC30FD CAD Model

Description

The IRG4IBC30FD is a through-hole IGBT transistor designed for use in discrete semiconductor products and manufactured by Infineon Technologies.

  • Maximum Collector Current: 20.3A
  • Maximum Voltage Collector Emitter Breakdown: 600V
  • Switching Energy (On): 630μJ
  • Switching Energy (Off): 1.39mJ
  • Gate Charge: 51nC
  • Reverse Recovery Time: 42ns
  • Test Condition: 480V, 17A, 23Ohm, 15V
  • Status: Obsolete
  • Supply and Demand: Limited

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