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Same model may have multiple batches, images only for reference.
IRGS6B60KPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRGS6B60KPBF

Part No IRGS6B60KPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 13A 90W D2PAK
Datasheet
IRGS6B60KPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 13A
Pulsed Collector Current 26A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 5A
Maximum Power Dissipation 90W
Total Switching Energy(Ets) 110μJ (on), 135μJ (off)
Input Type Standard
Gate Charge 18.2nC
Turn-on and Turn-off delay time 25ns/215ns
Testing Conditions 400V, 5A, 100 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 040786-IRGS6B60KPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGS6B60KPBF CAD Model

Description

The Infineon Technologies 040786-IRGS6B60KPBF is an IGBT transistor with a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 13A.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 13A
  • Case/Package: D2PAK
  • Maximum Power Dissipation: 90W
  • Gate Charge: 18.2nC
  • IGBT Type: NPT
  • Input Type: Standard
  • Mounting: SMD (SMT)
  • Product Category: Discrete Semiconductor Product
  • Design Status: Not For New Designs
  • Supply and Demand Status: Limited

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