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Same model may have multiple batches, images only for reference.
IRG4BC30U Infineon Technologies
Same model may have multiple batches, images only for reference.

IRG4BC30U

Part No IRG4BC30U
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) | IGBT 600V 23A 100W TO220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 23A
Current - Collector Pulsed (Icm) 92A
Vce(on) (Maximum) at Vge, Ic 2.1V at 15V, 12A
Maximum Power 100W
Switching Energy 160μJ (on), 200μJ (off)
Input Type Standard
Gate Charge 50nC
Td (on/off) at 25°C 17ns/78ns
Test Condition 480V, 12A, 23Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188242-IRG4BC30U
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Alternative Energy, Industrial
Ultra Librarian 3D Model Ultra Librarian IRG4BC30U CAD Model

Description

The Infineon Technologies IRG4BC30U is a through-hole IGBT with a maximum collector current of 23A and a collector-emitter breakdown voltage of 600V.

  • Manufacturer: Infineon Technologies
  • Maximum Collector Current: 23A
  • Collector-Emitter Breakdown Voltage: 600V
  • Switching Energy (On): 160μJ
  • Switching Energy (Off): 200μJ
  • Gate Charge: 50nC
  • Vce(on): 2.1V @ 15V and 12A
  • Applications: Power management, alternative energy, and industrial
  • Package: TO-220AB
  • Operating Temperature: -55°C to 150°C

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