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Same model may have multiple batches, images only for reference.
IRG4BC30KDPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4BC30KDPBF

Part No IRG4BC30KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 28A 100W TO220AB
Datasheet
IRG4BC30KDPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 28A
Pulsed Collector Current 56A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 16A
Maximum Power Dissipation 100W
Total Switching Energy(Ets) 600μJ (on), 580μJ (off)
Input Type Standard
Gate Charge 67nC
Turn-on and Turn-off delay time 60ns/160ns
Testing Conditions 480V, 16A, 23 Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 016631-IRG4BC30KDPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRG4BC30KDPBF CAD Model

Description

The Infineon Technologies IRG4BC30KDPBF IGBT transistor, part number IRG4BC30KDPBF, is a through-hole mounting transistor with a maximum current collector of 28A and a maximum power dissipation of 100W.

  • Mounting: Through-Hole
  • Maximum Current Collector: 28A
  • Maximum Power Dissipation: 100W
  • Reverse Recovery Time (trr): 42ns
  • Collector-Emitter Saturation Voltage (Max): 2.7V @ 15V, 16A
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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