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IRFS4410

Name: IRFS4410
Brand: Infineon Technologies
SKU: 605324
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRFS4410
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	HEXFET Power MOSFET \| MOSFET N-CH 100V 96A D2PAK
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	100V
Id - Continuous Drain Current	96A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	10mOhm at 58A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 150μA
Gate Charge (Qg) (Maximum) at Vgs	180nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	5150pF at 50V
Power Dissipation (Maximum)	250W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	SMD
Supplier Device Package	D2PAK
Manufacturer Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1188012-IRFS4410
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRFS4410 CAD Model

Description

The Infineon Technologies IRFS4410 is an obsolete N-channel MOSFET that has a maximum power dissipation of 250W and a maximum drain-source breakdown voltage of 100V.

Power Dissipation: 250W (Maximum)
Drain-Source Breakdown Voltage: 100V (Maximum)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Rds On: 10mOhm @ 58A, 10V (Maximum)
Gate-Source Voltage(th): 4V @ 150μA (Maximum)
Gate Charge (Qg): 180nC @ 10V (Maximum)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
35+	$1.7487	$61.2045
85+	$1.4345	$121.9325
125+	$1.3895	$173.6875
175+	$1.3456	$235.4800
225+	$1.3005	$292.6125
300+	$1.1654	$349.6200

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 6,990 pieces

MOQ: 35 pcs

Order Increment : 1 pcs

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