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IRFP150N

Part No IRFP150N
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A) | MOSFET N-CH 100V 42A TO-247AC
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 42A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 36mOhm at 23A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 110nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1900pF at 25V
Power Dissipation (Maximum) 160W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-247AC
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1187762-IRFP150N
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFP150N CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel transistor with a TO-247AC package.

  • Status: obsolete
  • Drive Voltage: 10V
  • Maximum Power Dissipation: 160W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 42A
  • Rds On (Maximum) @ Id, Vgs: 36mOhm @ 23A, 10V
  • Gate-Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1900pF @ 25V
  • Gate Charge (Qg) (Maximum) @ Vgs: 110nC @ 10V
  • Used in: power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4335 $52.0200
250+ $0.4056 $101.4000
385+ $0.3916 $150.7660
555+ $0.3636 $201.7980
720+ $0.3496 $251.7120
895+ $0.3357 $300.4515
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 83,945 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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