The Infineon Technologies IRFI4110GPBF is a N-Channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 72A @ 25°C.

• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current @ 25°C: 72A
• Maximum Power Dissipation: 61W (Tc)
• Maximum Rds On @ Id,Vgs: 4.5 mOhm @ 43A, 10V
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 290nC @ 10V
• Maximum Input Capacitance: 9540pF @ 50V
• Maximum Gate-Source Voltage: ±20V
• Package: TO-220AB Full-Pak
• Suitable for Use in: various applications in the Discrete Semiconductor Products category.