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IRFB4137PBF

Part No IRFB4137PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description High Efficiency Synchronous Rectification in SMPS | MOSFET N-CH 300V 38A TO-220PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 300V
Id - Continuous Drain Current 38A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 69mOhm at 24A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 125nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5168pF at 50V
Power Dissipation (Maximum) 341W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187501-IRFB4137PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFB4137PBF CAD Model

Description

The Infineon Technologies IRFB4137PBF is a N-Channel MOSFET with a drain-source breakdown voltage of 300V and a continuous drain current of 38A. Infineon Technologies manufactures it.

  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current: 38A
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Voltage Threshold: 5V @ 250μA
  • Maximum On-Resistance: 69mOhm @ 24A and 10V
  • Package: TO-220-3
  • Power Dissipation: 341W
  • Drive Voltage Range: 10V (to maximize Rds On)
  • Applications: Power supplies, motor control, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.8030 $52.8330
26+ $3.9409 $102.4634
40+ $3.8178 $152.7120
55+ $3.6946 $203.2030
70+ $3.5715 $250.0050
94+ $3.2020 $300.9880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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