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IRF7807VD1TRPBF

Name: IRF7807VD1TRPBF
Brand: Infineon Technologies
SKU: 160051
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRF7807VD1TRPBF
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	MOSFET N-CH 30V 8.3A 8-SOIC
Datasheet	IRF7807VD1TRPBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	FETKY
Packaging	Reel(TR)
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Diode (Isolated)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8.3A (Ta)
Rds On (Max) @ Id, Vgs	25 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id	3V @ 250μA
Gate Charge (Qg) @ Vgs	14nC @ 4.5V
Power - Max	2.5W
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Style	SMD/SMT
Package	8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package	8-SO
Win Source Part Number	001943-IRF7807VD1TRPBF
Popularity	Medium
Supply and Demand Status	Balance
Quantity per package	4k pcs
Ultra Librarian 3D Model	Ultra Librarian IRF7807VD1TRPBF CAD Model

Description

The Infineon Technologies 001943-IRF7807VD1TRPBF is an N-channel MOSFET designed for use in discrete semiconductor products.

Series: FETKY
Package: 8-SOIC
Mounting: SMD (SMT)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current: 8.3A @ 25°C
Maximum Rds on at Id,Vgs: 25mOhm @ 7A, 4.5V
Gate-Source Threshold Voltage: 3V @ 250μA
Maximum Gate Charge: 14nC @ 4.5V
Maximum Power Dissipation: 2
Quantity per Package: 4k pcs

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
95+	$0.6343	$60.2585
225+	$0.5206	$117.1350
345+	$0.5043	$173.9835
475+	$0.4880	$231.8000
615+	$0.4717	$290.0955
820+	$0.4230	$346.8600

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 2,140 pieces

MOQ: 95 pcs

Order Increment : 1 pcs

Qty:

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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