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IRF7492

Part No IRF7492
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 200V 3.7A 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 3.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 79mOhm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 59nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1820pF at 25V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 95
MSL Level 1 (Unlimited)
Win Source Part Number 1187310-IRF7492
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7492 CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel transistor designed for use in discrete semiconductor products.

  • Channel Type: N-channel
  • Power Dissipation (Maximum): 2.5W
  • Continuous Drain Current: Up to 3.7A
  • Drain-Source Breakdown Voltage: 200V
  • Gate-Source Voltage Range: -20V to +20V
  • Input Capacitance: 1820pF @ 25V
  • Package: 8-SO
  • Rds On (Maximum): 79mOhm @ 2.2A and 10V
  • Status: Obsolete
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6089 $64.3560
90+ $1.3202 $118.8180
140+ $1.2797 $179.1580
190+ $1.2382 $235.2580
245+ $1.1966 $293.1670
325+ $1.0730 $348.7250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 107 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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