The Infineon Technologies MOSFET is a P-channel transistor designed for use in various applications, including power management, communications, and networking.

• Vds - Drain-Source Breakdown Voltage: 55V
• Id - Continuous Drain Current: 31A
• Rds On (Maximum) @ Id, Vgs: 60mOhm @ 16A, 10V
• Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
• Gate Charge (Qg) (Maximum) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Maximum) @ Vds: 1200pF @ 25V
• Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Power Dissipation (Maximum): 3.8W, 110W
• Popularity: medium
• Supply and Demand Status: limited