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IRF7453PBF

Part No IRF7453PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET®Power MOSFET | MOSFET N-CH 250V 2.2A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 250V
Id - Continuous Drain Current 2.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 230mOhm at 1.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 38nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 930pF at 25V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 95
MSL Level 1 (Unlimited)
Win Source Part Number 1187284-IRF7453PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7453PBF CAD Model

Description

The Infineon Technologies IRF7453PBF is an N-Channel MOSFET transistor designed for use in various applications.

  • Power Dissipation: 2.5W
  • Vds Drain-Source Breakdown Voltage: 250V
  • Drain Current: 2.2A
  • Rds On: 230mOhm @ 1.3A @ 10V
  • Gate Source Voltage(th): 5.5V @ 250μA
  • Gate Charge (Qg): 38nC @ 10V
  • Package: 8-SO
  • Status: Obsolete
  • Supply and Demand Status: balance
  • Manufacturer Pack Quantity: 95

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,688 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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